Data Sheet.
HY[B/E]18L512160BF-7.5
512-Mbit Mobile-RAM
2
Functional Description
READ and WRITE accesses to the Mobile-RAM are burst oriented. Accesses start at a selected location and continue for a
programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command,
followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select
the bank and row to be accessed:
• BA0, BA1 select the banks
• A0 - A12 select the row
The address bits registered coincident with the READ or WRITE command are used to select the starting column
location for the burst access.
Prior to normal operation, the Mobile-RAM must be initialized. The following subsections provide detailed
information covering device initialization, register definition, command description, and device operation.
2.1
Power On and Initialization
The Mobile-RAM must be powered up and initialized in a predefined manner (see Figure 3). Operational procedures other than
those specified may result in undefined operation.
FIGURE 3
Power-Up Sequence and Mode Register Sets
VDD
VDDQ
200µs
tCK
tRP
tRFC
tRFC
tMRD
tMRD
CLK
CKE
NOP
PRE
ARF
ARF
MRS
CODE
CODE
MRS
CODE
CODE
NAOCTP
NROAP
NROAP
Command
Address
A10
All
Banks
NBOAP
BA0,BA1
BA0=L
BA1=L
BA0=L
BA1=H
DQM
DQ
(H Level)
(High-Z)
Power-up:
VDD and CK stable
Load
Load
Ext.
Mode
Register
Mode
Register
= Don't Care
Rev. 1.22, 2006-12
01132005-06IU-IGVM
8
QIMONDA [ QIMONDA AG ]
