Internet Data Sheet
HY[B/I]18T1G[40/80/16]0B[C/F](L/V)
1-Gbit Double-Data-Rate-Two SDRAM
1
Overview
This chapter gives an overview of the 1-Gbit Double-Data-Rate-Two SDRAM product family and describes its main
characteristics.
1.1
Features
The 1-Gbit Double-data-Rate SDRAM offers the following key features:
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1.8 V ± 0.1 V Power Supply
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Off-Chip-Driver impedance adjustment (OCD) and On-
Die-Termination (ODT) for better signal quality
Auto-Precharge operation for read and write bursts
Auto-Refresh, Self-Refresh and power saving Power-
Down modes
Average Refresh Period 7.8 µs at a TCASE lower than
85 °C, 3.9 µs between 85 °C and 95 °C
Programmable self refresh rate via EMRS2 setting
Programmable partial array refresh via EMRS2 settings
DCC enabling via EMRS2 setting
1.8 V ± 0.1 V (SSTL_18) compatible I/O
DRAM organizations with 4, 8 and 16 data in/outputs
Double Data Rate architecture: two data transfers per
clock cycle four internal banks for concurrent operation
Programmable CAS Latency: 3, 4, 5 and 6
Programmable Burst Length: 4 and 8
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Differential clock inputs (CK and CK)
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Bi-directional, differential data strobes (DQS and DQS) are
transmitted / received with data. Edge aligned with read
data and center-aligned with write data
DLL aligns DQ and DQS transitions with clock
DQS can be disabled for single-ended data strobe
operation
Commands entered on each positive clock edge, data and
data mask are referenced to both edges of DQS
Data masks (DM) for write data
Posted CAS by programmable additive latency for better
command and data bus efficiency
Full and reduced Strength Data-Output Drivers
1K page size for ×4 & ×8, 2K page size for ×16
Package: P(G)-TFBGA-68 , P(G)-TFBGA-84
and PG-TFBGA-92
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RoHS Compliant Products1)
All Speed grades faster than DDR2–400 comply with
DDR2–400 timing specifications when run at a clock rate
of 200 MHz.
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TABLE 1
Performance Tables for –2.5(F)
Product Type Speed Code
Speed Grade
–2.5F
–2.5
Unit
DDR2–800D 5–5–5
DDR2–800E 6–6–6
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Max. Clock Frequency
@CL6 fCK6 400
@CL5 fCK5 400
400
333
266
200
15
MHz
MHz
MHz
MHz
ns
@CL4 fCK4 266
@CL3 fCK3 200
tRCD 12.5
Min. RAS-CAS-Delay
Min. Row Precharge Time
Min. Row Active Time
Min. Row Cycle Time
tRP 12.5
15
ns
tRAS 45
45
ns
tRC 57.5
60
ns
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.3, 2007-07
3
03062006-ZNH8-HURV
QIMONDA [ QIMONDA AG ]
