Internet Data Sheet
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B
Small Outline DDR2 SDRAM Modules
3.2
DC Operating Conditions
TABLE 10
Operating Conditions
Parameter
Symbol
Values
Min.
Max.
+65
+95
+100
+105
90
Unit
Note
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
1)
2)
3)
4)
T
OPR
T
CASE
T
STG
PBar
0
0
– 50
+69
10
°C
°C
°C
kPa
%
5)
1)2)3)4)
H
OPR
DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
t
REFI
= 3.9
µs
When operating this product in the 85 °C to 95 °C
T
CASE
temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of
I
DD6
by approximately 50%.
5) Up to 3000 m.
TABLE 11
Supply Voltage Levels and DC Operating Conditions
Parameter
Symbol
Values
Min.
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
Typ.
1.8
1.8
0.5
×
V
DDQ
—
—
—
Max.
1.9
1.9
0.51
×
V
DDQ
3.6
V
V
V
V
V
V
3)
1)
2)
Unit
Note
In / Output Leakage Current
–5
—
5
µA
1) Under all conditions,
V
DDQ
must be less than or equal to
V
DD
2) Peak to peak AC noise on
V
REF
may not exceed ± 2%
V
REF
(DC).
V
REF
is also expected to track noise in
V
DDQ
.
3) Input voltage for any connector pin under test of 0 V
≤
V
IN
≤
V
DDQ
+ 0.3 V; all other pins at 0 V. Current is per pin
V
DD
V
DDQ
V
REF
V
DDSPD
V
IH(DC)
V
IL (DC
)
I
L
1.7
1.7
0.49
×
V
DDQ
1.7
V
REF
+ 0.125
– 0.30
V
DDQ
+ 0.3
V
REF
– 0.125
Rev. 1.0, 2006-11
11172006-DXYK-2PPW
13
QIMONDA [ QIMONDA AG ]
