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HYS72D128300HBR-6-C 参数 Datasheet PDF下载

HYS72D128300HBR-6-C图片预览
型号: HYS72D128300HBR-6-C
PDF下载: 下载PDF文件 查看货源
内容描述: 184针录得双数据速率SDRAM模块 [184-Pin Registered Double-Data-Rate SDRAM Module]
分类和应用: 动态存储器
文件页数/大小: 39 页 / 2387 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet
HYS72D[64/128/256]xxxHBR–[5/6]–C
Registered Double-Data-Rate SDRAM Module
3
3.1
Electrical Characteristics
Operating Conditions
TABLE 7
Absolute Maximum Ratings
Parameter
Symbol
min.
Values
typ.
1
50
max.
Unit
Note/ Test
Condition
Voltage on I/O pins relative to
V
SS
Voltage on inputs relative to
V
SS
Voltage on
V
DD
supply relative to
V
SS
Voltage on
V
DDQ
supply relative to
V
SS
Operating temperature (ambient)
Storage temperature (plastic)
Power dissipation (per SDRAM component)
Short circuit output current
V
IN
,
V
OUT
V
IN
V
DD
V
DDQ
T
A
T
STG
PD
–0.5
–1
–1
–1
0
-55
V
DDQ
+ 0.5
+3.6
+3.6
+3.6
+70
+150
V
V
V
V
°C
°C
W
mA
I
OUT
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This is a stress
rating only, and functional operation should be restricted to recommended operation conditions. Exposure
to absolute maximum rating conditions for extended periods of time may affect device reliability and
exceeding only one of the values may cause irreversible damage to the integrated circuit.
Rev. 1.22, 2007-08
03292006-6N25-8R3I
10