FM18W08
Read Cycle AC Parameters
(T
A
= -40C to + 85C, C
L
= 30 pF, unless otherwise specified)
V
DD
2.7 to 3.0V V
DD
3.0 to 5.5V
Symbol
Parameter
Min
Max
Min
Max
t
CE
Chip Enable Access Time (to data valid)
80
70
t
CA
Chip Enable Active Time
80
70
t
RC
Read Cycle Time
145
130
t
PC
Precharge Time
65
60
t
AS
Address Setup Time
0
0
t
AH
Address Hold Time
15
15
t
OE
Output Enable Access Time
15
12
t
HZ
Chip Enable to Output High-Z
15
15
t
OHZ
Output Enable to Output High-Z
15
15
Write Cycle AC Parameters
(T
A
= -40C to + 85C, unless otherwise specified)
V
DD
2.7 to 3.0V V
DD
3.0 to 5.5V
Symbol
Parameter
Min
Max
Min
Max
t
CA
Chip Enable Active Time
80
70
t
CW
Chip Enable to Write High
80
70
t
WC
Write Cycle Time
145
130
t
PC
Precharge Time
65
60
t
AS
Address Setup Time
0
0
t
AH
Address Hold Time
15
15
t
WP
Write Enable Pulse Width
50
40
t
DS
Data Setup
40
30
t
DH
Data Hold
0
0
t
WZ
Write Enable Low to Output High Z
15
15
t
WX
Write Enable High to Output Driven
10
10
t
HZ
Chip Enable to Output High-Z
15
15
t
WS
Write Enable Setup
0
0
t
WH
Write Enable Hold
0
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
1
2
2
Notes
1
This parameter is periodically sampled and not 100% tested.
2
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
Data Retention
Symbol
Parameter
T
DR
@
+85ºC
@
+80ºC
@
+75ºC
Min
10
19
38
Max
-
-
-
Units
Years
Years
Years
Notes
Rev. 2.0
Dec. 2011
Page 7 of 11
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
