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2SK1340 参数 Datasheet PDF下载

2SK1340图片预览
型号: 2SK1340
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 89 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1340
Main Characteristics
Power vs. Temperature Derating
150
Maximum Safe Operation Area
50
20
10
is
on
th
DS (
in R
n y
tio ed b
ra t
pe imi
O L
is
ea
Ar
10
)
Channel Dissipation Pch (W)
Drain Current I
D
(A)
10
5
2
1
0.5
0.2
0.1
0.05
Ta = 25°C
1
3
µ
s
0
100
1
10
s
m
µ
s
PW
=
D
C
pe
O
ra
tio
n
m
s
(1
)
ot
Sh
50
=
(T
C
25
)
°
C
0
50
100
150
10
30
100
300 1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
10 V
6V
Pulse Test
5V
5
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
4
3
4
3
2
4.5 V
2
1
75°C
T
C
= 25°C
–25°C
4V
V
GS
= 3.5 V
1
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
20
5A
16
12
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V
GS
= 10 V
5
15 V
2
1
0.5
0.2
8
2A
I
D
= 1 A
0
4
8
12
16
20
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.5
1
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 May 15, 2006 page 3 of 6