2SK1340
Static Drain to Source on State
Resistance vs. Temperature
10
V
GS
= 10 V
Pulse Test
8
6
I
D
= 5 A
2A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
10
5
2
1
0.5
0.2
0.1
0.05
V
DS
= 20 V
Pulse Test
0.1
0.2
0.5
1
2
5
–25°C
Tc = 25°C
75°C
4
1A
2
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
5,000
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Capacitance C (pF)
2,000
1,000
500
1,000
Ciss
Coss
100
Crss
10
200
100
50
0.1
0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
1,000
V
DD
= 250 V
800
400 V
600 V
V
DS
V
GS
16
I
D
= 5 A
12
20
500
Switching Characteristics
Switching Time t (ns)
200
100
50
tr
td(off)
tf
600
400
600 V
400 V
V
DD
= 250 V
20
40
60
80
100
8
20
td(on)
200
4
0
0
10 V = 10 V, V = 30 V
GS
DD
PW = 2
µs,
duty
≤
1 %
5
0.1 0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current
I
D
(A)
Rev.3.00 May 15, 2006 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
