欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SK1808 参数 Datasheet PDF下载

2SK1808图片预览
型号: 2SK1808
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK1808的Datasheet PDF文件第1页浏览型号2SK1808的Datasheet PDF文件第2页浏览型号2SK1808的Datasheet PDF文件第4页浏览型号2SK1808的Datasheet PDF文件第5页浏览型号2SK1808的Datasheet PDF文件第6页浏览型号2SK1808的Datasheet PDF文件第7页  
2SK1808
Main Characteristics
Power vs. Temperature Derating
60
100
30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
10
3
1
0.3
0.1
0.03
0.01
Ta = 25°C
n is n
tio a (o
ra are
DS
R
pe
O this by
in ited
lim
)
40
10
µ
s
10
0
PW
=
10
1
m
µ
s
m
s
D
C
O
pe
ra
tio
s
(1
)
)
ot
°
C
Sh
25
=
c
n
20
(T
0
50
100
150
1
3
10
30
100 300 1000 3000 10000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
10 V
6V
Pulse Test
5V
5
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
4
3
4
3
2
4.5 V
2
1
75°C
T
C
= 25°C
–25°C
4V
V
GS
= 3.5 V
1
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
20
5A
16
12
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V
GS
= 10 V
5
15 V
2
1
0.5
0.2
8
2A
I
D
= 1 A
0
4
8
12
16
20
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.5
1
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6