HAT1023R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
–20
±10
–7
–56
–7
2.5
150
Unit
V
V
A
A
A
W
°C
°C
Pch
Tch
Note 2
Storage temperature
Tstg
–55 to +150
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
≤
10 s
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
3. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
–20
±10
—
—
–0.5
—
—
9
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.027
0.04
14
2250
1120
300
40
200
280
220
–0.9
75
Max
—
—
±10
–10
–1.5
0.04
0.06
—
—
—
—
—
—
—
—
–1.4
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= –7 A, V
GS
= 0
I
F
= –7 A, V
GS
= 0
di
F
/dt = 20 A/µs
Note 3
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±8
V, V
DS
= 0
V
DS
= –20 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –4 A, V
GS
= –4 V
Note 3
I
D
= –4 A, V
GS
= –2.5 V
I
D
= –4 A, V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
V
GS
= –4 V, I
D
= –4 A,
V
DD
≅
–10 V
Note 3
Note 3
Rev.9.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
