HAT1023R
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance |yfs| (S)
0.10
Pulse Test
0.08
I
D
= –5, –2, –1 A
0.06
V
GS
= –2.5 V
0.04
–5, –2, –1 A
0.02
–4 V
0
–40
50
20
10
75°C
5
2
1
0.5
–0.2
V
DS
= –10 V
Pulse Test
–0.5
–1
–2
–5
–10 –20
25°C
Tc = –25°C
0
40
80
120
160
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
–0.2
di / dt = 20 A /
µs
V
GS
= 0, Ta = 25°C
–0.5
–1
–2
–5
–10
–20
Capacitance C (pF)
V
GS
= 0
f = 1 MHz
0
–4
–8
–12
–16
–20
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
V
DS
(V)
–2
Drain to Source Voltage
Gate to Source Voltage
Switching Time t (ns)
–10
V
DD
= –5 V
–10 V
–20 V
V
GS
(V)
0
0
1000
500
td(off)
–20
V
DS
V
GS
–4
200
100
50
tf
tr
td(on)
–30
V
DD
= –20 V
–10 V
–5 V
I
D
= –7 A
0
16
32
48
64
–6
–40
–8
–50
–10
80
20 V = –4 V, V = –10 V
GS
DD
PW = 3
µs,
duty
≤
1 %
10
–0.2
–0.5 –1
–2
–5
–10
–20
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.9.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
