欢迎访问ic37.com |
会员登录 免费注册
发布采购

RF3375 参数 Datasheet PDF下载

RF3375图片预览
型号: RF3375
PDF下载: 下载PDF文件 查看货源
内容描述: 通用扩增fi er [GENERAL PURPOSE AMPLIFIER]
分类和应用: 射频微波放大器
文件页数/大小: 10 页 / 254 K
品牌: RFMD [ RF MICRO DEVICES ]
 浏览型号RF3375的Datasheet PDF文件第1页浏览型号RF3375的Datasheet PDF文件第3页浏览型号RF3375的Datasheet PDF文件第4页浏览型号RF3375的Datasheet PDF文件第5页浏览型号RF3375的Datasheet PDF文件第6页浏览型号RF3375的Datasheet PDF文件第7页浏览型号RF3375的Datasheet PDF文件第8页浏览型号RF3375的Datasheet PDF文件第9页  
RF3375
Absolute Maximum Ratings
Parameter
Input RF Power
Operating Ambient Temperature
Storage Temperature
I
CC
Rating
+13
-40 to +85
-60 to +150
80
Unit
dBm
°C
°C
mA
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Overall
Frequency Range
3dB Bandwidth
Gain
Min.
Specification
Typ.
DC to >6000
6
Max.
Unit
MHz
GHz
dB
dB
dB
dB
Freq=500MHz
Freq=1000MHz
Freq=2000MHz
Freq=3000MHz
Freq=4000MHz
Freq=6000MHz
dB
Freq=2000MHz
Condition
T=25 °C, I
CC
=65mA (See Note 1.)
12.5
12.5
12.2
12.2
12.0
10.0
13.5
13.5
13.2
13.2
13.0
12.4
4.6
<1.9:1
<2.0:1
<1.7:1
Noise Figure
Input VSWR
Output VSWR
Output IP
3
Output P
1dB
Reverse Isolation
+31.0
+28.0
+17.0
+14.5
In a 50Ω system, DC to 6000MHz
In a 50Ω system, DC to 500MHz
In a 50Ω system, 500MHz to 6000MHz
dBm
dBm
dBm
dBm
dB
°C/W
°C
Freq=1000MHz
Freq=2000MHz
Freq=1000MHz
Freq=2000MHz
Freq=2000MHz
I
CC
=65mA, P
DISS
=313mW. (See Note 3.)
V
PIN
=4.81V
T
CASE
=+85°C
T
CASE
=+85°C
With 22Ω bias resistor, T=+25
o
C
At pin 8 with I
CC
=65mA
At Evaluation Board Connector I
CC
=65mA
See Note 2.
+33.9
+30.0
+18.5
+16.0
-18.0
175
139
Thermal
Theta
JC
Maximum Measured Junction
Temperature at DC Bias Condi-
tions
Mean Time to Failures
1500
5.18
6.6
65
5.36
7.0
80
years
V
V
mA
Power Supply
Device Operating Voltage
Operating Current
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not
optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
Note 2: The RF3375 must be operated at or below 80mA in order to achieve the thermal performance listed above. While the RF3375 may be
operated at higher bias currents, 65mA is the recommended bias to ensure the highest possible reliability and electrical performance.
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be
used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 80mA over all intended operating condi-
tions.
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A7 DS050524