RF3375
0.0
Reverse Isolation versus Frequency Across
Temperature
(I
CC
=65mA)
Junction Temperature versus Power Dissipated
180.000
(T
AMBIENT
=+85°C)
170.000
-5.0
-10.0
Junction Temperature (°C)
-40C
25C
85C
0.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
160.000
Reverse Isolation (dB)
150.000
-15.0
140.000
130.000
-20.0
120.000
-25.0
110.000
-30.0
100.000
0.250
0.275
0.300
0.325
0.350
0.375
0.400
Frequency (MHz)
Power Dissipation versus Device Voltage Across Temperature
(T
AMBIENT
=+85°C)
Power Dissipated (Watts)
Bias Current versus Supply Voltage Across Temperature
100.0
0.50
0.45
0.40
(At Evaluation Board Connector, R
BIAS
=22Ω)
90.0
80.0
Power Dissipated (W)
0.35
0.30
70.0
I
CC
(mA)
0.25
0.20
0.15
60.0
50.0
40.0
0.10
0.05
0.00
4.60
4.70
4.80
4.90
5.00
5.10
5.20
30.0
-40C
25C
85C
5.7
5.9
6.1
6.3
6.5
6.7
6.9
7.1
7.3
7.5
7.7
20.0
V
PIN
(V)
Bias Current versus Devices Voltage Across Temperature
(At Pin 3 of the RF3375)
100.0
90.0
80.0
70.0
V
CC
(V)
I
CC
(mA)
60.0
50.0
40.0
30.0
20.0
10.0
4.6
4.8
5.0
5.2
5.4
5.6
5.8
-40C
25C
85C
V
PIN
(V)
Rev A7 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
7 of 10
RFMD [ RF MICRO DEVICES ]
