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RF5110GTR7 参数 Datasheet PDF下载

RF5110GTR7图片预览
型号: RF5110GTR7
PDF下载: 下载PDF文件 查看货源
内容描述: 3V GSM功率放大器 [3V GSM POWER AMPLIFIER]
分类和应用: 放大器功率放大器GSM
文件页数/大小: 22 页 / 832 K
品牌: RFMD [ RF MICRO DEVICES ]
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RF5110G
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
APC1,2
)
DC Supply Current
Input RF Power
Duty Cycle at Max Power
Output Load VSWR
Operating Case Temperature
Storage Temperature
Rating
-0.5 to +6.0
-0.5 to +3.0
2400
+13
50
10:1
-40 to +85
-55 to +150
Unit
V
DC
V
mA
dBm
%
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Overall
Operating Frequency Range
Usable Frequency Range
Maximum Output Power
Total Efficiency
Min.
Specification
Typ.
Max.
Unit
Condition
Temp=25°C, V
CC
=3.6V, V
APC1,2
=2.8V,
P
IN
=+4.5dBm, Freq=880MHz to 915MHz,
37.5% Duty Cycle, pulse width=1731μs
880 to 915
800 to 950
33.8
33.1
50
57
12
5
34.5
MHz
MHz
dBm
dBm
%
%
%
+9.5
-72
dBm
dBm
See evaluation board schematic.
Using different evaluation board tune.
Temp=25°C, V
CC
=3.6V, V
APC1,2
=2.8V
Temp=+60°C, V
CC
=3.3V, V
APC1,2
=2.8V
At P
OUT,MAX
, V
CC
=3.6V
P
OUT
=+20dBm
P
OUT
=+10dBm
RBW=100kHz, 925MHz to 935MHz,
P
OUT,MIN
<P
OUT
<P
OUT,MAX
,
P
IN,MIN
<P
IN
<P
IN,MAX
, V
CC
=3.3V to 5.0V
RBW=100kHz, 935MHz to 960MHz,
P
OUT,MIN
<P
OUT
<P
OUT,MAX
,
P
IN,MIN
<P
IN
<P
IN,MAX
, V
CC
=3.3V to 5.0V
V
APC1,2
=0.3V, P
IN
=+9.5dBm
P
IN
=+9.5dBm
P
IN
=+9.5dBm
Input Power for Max Output
Output Noise Power
+4.5
+7.0
-81
dBm
Forward Isolation
Second Harmonic
Third Harmonic
All Other Non-Harmonic
Spurious
Input Impedance
Optimum Source Impedance
Input VSWR
Output Load VSWR
Stability
Ruggedness
Output Load Impedance
8:1
10:1
2.6-j1.5
50
40+j10
-20
-25
-22
-7
-7
-36
dBm
dBm
dBm
dBm
Ω
Ω
For best noise performance
P
OUT,MAX
-5dB<P
OUT
<P
OUT,MAX
P
OUT
<P
OUT,MAX
-5dB
Spurious<-36dBm, V
APC1,2
=0.3V to 2.6V,
RBW=100kHz
No damage
2.5:1
4:1
Ω
Load Impedance presented at RF OUT pad
2 of 22
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A4 DS071026