2SK3018
Transistor
Electrical characteristics
(Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
R
DS(on)
|Y
fs
|
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1
1.5
8
13
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Conditions
V
GS
= ±20V,
V
DS
=
0V
I
D
=
10µA, V
GS
=
0V
V
DS
=
30V, V
GS
=
0V
V
DS
=
3V, I
D
=
100µA
I
D
=
10mA, V
GS
=
4V
I
D
=
1mA, V
GS
=
2.5V
V
DS
=
3V, I
D
=
10mA
V
DS
=
5V
V
GS
=
0V
f
=
1MHz
I
D
=
10mA, V
DD
V
GS
=
5V
R
L
=
500Ω
R
G
=
10Ω
5V
Electrical characteristic curves
GATE THRESHOLD VOLTAGE : V
GS
(th)
(V)
0.15
200m
4V
DRAIN CURRENT : I
D
(A)
3V
DRAIN CURRENT : I
D
(A)
3.5V
Ta=25°C
Pulsed
100m
50m
20m
10m
5m
2m
1m
0.5m
V
DS
=3V
Pulsed
2
V
DS
=3V
I
D
=0.1mA
Pulsed
1.5
0.1
2.5V
1
0.05
2V
V
GS
=1.5V
Ta=125
°C
75
°C
25
°C
−25°C
0.5
0.2m
0
0
1
2
3
4
5
0.1m
0
1
2
3
4
0
−50
−25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
CHANNEL TEMPERATURE : Tch (
°C
)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs.
channel temperature
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)
(Ω)
20
10
5
Ta=125
°C
75
°C
25
°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)
(Ω)
20
10
5
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)
(Ω)
V
GS
=4V
Pulsed
50
V
GS
=2.5V
Pulsed
15
Ta=25°C
Pulsed
10
2
1
0.5
0.001
0.002
2
1
0.5
0.001 0.002
5
I
D
=0.1A
I
D
=0.05A
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
0
5
10
15
20
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static drain-source on-state
resistance vs. drain current (
Ι
)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Rev.B
2/3
ROHM [ ROHM ]
