2SK3018
Transistor
200m
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)
(Ω)
REVERSE DRAIN CURRENT : I
DR
(A)
9
8
7
I
D
=100mA
V
GS
=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.5
V
DS
=3V
Pulsed
0.2
0.1
0.05
0.02
0.01
100m
50m
V
GS
=0V
Pulsed
6
5
4
I
D
=50mA
Ta=−25
°C
25
°C
75
°C
125
°C
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=125
°C
75
°C
25
°C
−25°C
3
2
1
0.005
0.002
0
−50
−25
0
25
50
75
100 125
150
0.001
0.0001
0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05
0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
Fig.8 Forward transfer
admittance vs. drain current
Fig.9 Reverse drain current vs.
source-drain voltage (
Ι
)
REVERSE DRAIN CURRENT : I
DR
(A)
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=25
°C
Pulsed
50
SWITCHING TIME : t (ns)
20
Ta=25
°C
f=1MH
Z
V
GS
=0V
1000
t
f
t
d(off)
500
CAPACITANCE : C (pF)
C
iss
10
5
200
100
50
Ta=25°C
V
DD
=5V
V
GS
=5V
R
G
=10Ω
Pulsed
V
GS
=4V
0V
C
oss
C
rss
t
r
t
d(on)
20
10
5
2
1
0.5
0.1
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
2
0.1
0.2
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(mA)
Fig.10 Reverse drain current vs.
source-drain voltage (
ΙΙ
)
Fig.11 Typical capacitance vs.
drain-source voltage
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
Switching characteristics measurement circuit
Pulse width
50%
10%
10%
90%
50%
V
GS
V
GS
I
D
D.U.T.
R
L
V
DS
R
G
V
DS
10%
90%
90%
t
d(off)
t
f
t
off
V
DD
t
d(on)
t
on
t
r
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Rev.B
3/3
ROHM [ ROHM ]
