UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
1.8
1.6
Ta
=25°C
V
CE
=
10V
1000
Ta
=25°C
I
C
/ I
B
=
10
500
Ta
=25°C
V
CC
=
30V
I
C
/ I
B
=
10
TURN ON TIME : ton(ns)
1.2
100
V
CC
=
30V
10V
0.8
0.4
RISE TIME : tr(ns)
100
10
0
1
10
100
1000
COLLECTOR CURRENT : Ic(mA)
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
5
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.7 Grounded emitter propagation
characteristics
Fig.8 Turn-on time vs. collector
current
Fig.9 Rise time vs. collector
current
1000
Ta
=25°C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
1000
Ta
=25°C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
100
Ta
=25°C
f
=
1MHz
STORAGE TIME : Ts(ns)
CAPACITANCE(pF)
FALL TIME : tf(ns)
Cib
100
100
10
Cob
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
1
0.1
1.0
10
REVERSE BIAS VOLTAGE(V)
100
Fig.10 Storage time vs. collector
current
Fig.11 Fall time vs. collector
current
Fig.12 Input / output capacitance
vs. voltage
100
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
100MHz 250MHz 300MHz
200MHz
10
1
250MHz
0.1
CURRENT GAIN-BANDWIDTH PRODUCT(MHz)
Ta
=25°C
1000
Ta
=25°C
V
CE
=
10V
100
1
10
100
1000
COLLECTOR CURRENT : Ic(mA)
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.13 Gain bandwidth product
Fig.14 Gain bandwidth product
vs. collector current
ROHM [ ROHM ]
