RB495D
Diodes
Electrical characteristic curves
(Ta=25°C)
1
Ta=75℃
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
100000
Ta=125℃
10000
1000
100
10
1
0.1
0
100
200
300
400
500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
600
0
5
10
15
20
25
30
35
40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
Ta=125℃
0.1
Ta=25℃
Ta=-25℃
0.01
Ta=75℃
Ta=25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
Ta=-25℃
0.001
1
0
5
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
380
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
200
Ta=25℃
IF=200mA
n=30pcs
180
160
140
120
100
80
60
40
20
0
AVE:33.62uA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
370
360
350
340
AVE:359.0mV
330
Ta=25℃
VR=25V
n=30pcs
100
95
90
85
80
75
70
65
60
55
50
AVE:71.8pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
30
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
30
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
1cyc
8.3ms
20
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
25
20
15
10
5
25
20
15
10
5
AVE:8.6ns
0
15
8.3ms 8.3ms
1cyc
10
5
AVE:12.50A
0
0
1
trr DISPERSION MAP
IFSM DISRESION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
20
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
1000
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
0.3
Per chip
15
t
100
Rth(j-c)
0.2
D=1/2
10
Mounted on epoxy board
Sin(θ＝180)
DC
10
IM=1mA
time
IF=10mA
0.1
5
1ms
300us
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1
0.001
0
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0.1
0.2
0.3
0.4
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.5
Rev.B
2/3
ROHM [ ROHM ]
