RU120N15
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU120N15
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 150V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=60A
150
1
30
2
3
4
±100
15
17
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
q
rr
③
Diode Forward Voltage
Reverse Recovery Time
I
SD
=60 A, V
GS
=0V
I
SD
=60A, dl
SD
/dt=100A/µs
0.8
68
130
1.3
V
ns
nC
Reverse Recovery Charge
④
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 30V,
Frequency=1.0MHz
1.0
6600
900
480
21
40
70
Ω
pF
V
DD
=35V, R
L
=35Ω,
I
DS
= 1A, V
GEN
= 10V,
R
G
=6Ω
40
110
69
ns
210
140
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
①Pulse
width limited by safe operating area.
②Current
limited by package( Limitation Current is 75A )
③Pulse
test ; Pulse width≤300
µ
s, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
155
V
DS
=30V, V
GS
= 10V,
I
DS
=60A
45
48
220
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C – JAN., 2010
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
