RU1H100
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU1H100
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
,
I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=40A
100
1
30
2
3
4
±100
11
14
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
q
rr
③
Diode Forward Voltage
Reverse Recovery Time
I
SD
=40A, V
GS
=0V
36
I
SD
=40A, dl
SD
/dt=100A/µs
46
1.2
V
ns
nC
Reverse Recovery Charge
④
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 50V,
Frequency=1.0MHz
1.5
3450
265
148
19
Ω
pF
V
DD
=50V,I
DS
= 40A, V
GEN
=
10V,R
G
=5.6Ω
86
ns
55
69
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
①Current
limited by package.
②
Limited by T
Jmax
, I
AS
=40A, V
DD
= 48V, R
G
= 47Ω , Starting T
J
= 25°C
③Pulse
test ; Pulse width≤400
µ
s, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
85
V
DS
=80V, V
GS
= 10V,
I
DS
=40A
20
35
135
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
