RU30120M
Mounted on Large Heat Sink
R
θJC
R
θJA
③
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
1.3
30
°C/W
°C/W
Drain-Source Avalanche Ratings
E
AS
④
Avalanche Energy, Single Pulsed
225
mJ
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
⑤
(T
C
=25°C Unless Otherwise Noted)
RU30120M
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
=30V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
V
GS
=4.5V, I
DS
=20A
30
1
30
1
2
3
±100
2
2.9
3
4
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
⑤
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑥
I
SD
=20A, V
GS
=0V
I
SD
=20A, dl
SD
/dt=100A/µs
32
70
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
1.8
3170
480
265
27
92
67
37
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑥
V
DD
=15V, R
L
=0.75Ω,
I
DS
=20A, V
GEN
=10V,
R
G
=3Ω
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
65
V
DS
=24V, V
GS
=10V,
I
DS
=20A
14
22
nC
Gate-Source Charge
Gate-Drain Charge
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
