RU602B
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU602B
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
=60V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=1A
60
1
30
2
3
4
±100
220
250
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
④
I
SD
=1A, V
GS
=0V
I
SD
=1A, dl
SD
/dt=100A/µs
23
17
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=30V,
Frequency=1.0MHz
1.5
195
26
14
8
V
DD
=30V, R
L
=30Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=1Ω
11
18
7
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=48V, V
GS
=10V,
I
DS
=1A
6.5
1.3
2.3
nC
Pulse width limited by safe operating area.
②When
mounted on 1 inch square copper board, t
≤10sec.
The value in any given application depends on
the user's specific board design.
③Pulse
test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2011
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
