RU6H11R
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
C
=25°C Unless Otherwise Noted)
RU6H11R
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
=600V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±30V, V
DS
=0V
V
GS
=10V, I
DS
=5A
600
1
30
2
3
4
±100
0.75
0.85
V
µA
V
nA
Ω
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
④
I
SD
=10A, V
GS
=0V
I
SD
=10A, dl
SD
/dt=100A/µs
320
2.8
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=300V,
Frequency=1.0MHz
10
1160
195
12
35
V
DD
=300V, R
L
=30Ω,
I
DS
=10A, V
GEN
=10V,
R
G
=25Ω
85
70
65
1.3
V
ns
µC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
①Current
limited by maximum junction temperature.
②Limited
by T
Jmax
, I
AS
=3.5A, V
DD
= 100V, R
G
= 50Ω , Starting T
J
= 25°C.
③Pulse
test ; Pulse width≤300
µ
s, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
32
V
DS
=480V, V
GS
=10V,
I
DS
=10A
8
16
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A – JUL., 2012
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
