SDRAM 256Mb E-die (x4, x8, x16)
FUNCTIONAL BLOCK DIAGRAM
CMOS SDRAM
I/O Control
LWE
LDQM
Data Input Register
Bank Select
16M x 4 / 8M x 8 / 4M x 16
Sense AMP
16M x 4 / 8M x 8 / 4M x 16
16M x 4 / 8M x 8 / 4M x 16
16M x 4 / 8M x 8 / 4M x 16
Refresh Counter
Output Buffer
Row Decoder
Row Buffer
DQi
Address Register
CLK
ADD
Column Decoder
Col. Buffer
Latency & Burst Length
LRAS
LCBR
LCKE
LRAS
LCBR
LWE
LCAS
Timing Register
Programming Register
LWCBR
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.5 May 2004