SDRAM 256Mb E-die (x4, x8, x16)
PIN CONFIGURATION
(Top view)
x16
x8
x4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
CMOS SDRAM
x4
V
SS
N.C
V
SSQ
N.C
DQ3
V
DDQ
N.C
N.C
V
SSQ
N.C
DQ2
V
DDQ
N.C
V
SS
N.C/RFU
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
x8
V
SS
DQ7
V
SSQ
N.C
DQ6
V
DDQ
N.C
DQ5
V
SSQ
N.C
DQ4
V
DDQ
N.C
V
SS
N.C/RFU
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
x16
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
N.C/RFU
UDQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
V
DD
V
DD
V
DD
DQ0
DQ0
N.C
V
DDQ
V
DDQ
V
DDQ
DQ1
N.C
N.C
DQ2
DQ1
DQ0
V
SSQ
V
SSQ
V
SSQ
DQ3
N.C
N.C
DQ4
DQ2
N.C
V
DDQ
V
DDQ
V
DDQ
DQ5
N.C
N.C
DQ6
DQ3
DQ1
V
SSQ
V
SSQ
V
SSQ
DQ7
N.C
N.C
V
DD
V
DD
V
DD
LDQM
N.C
N.C
WE
WE
WE
CAS
CAS
CAS
RAS
RAS
RAS
CS
CS
CS
BA0
BA0
BA0
BA1
BA1
BA1
A10/AP A10/AP A10/AP
A0
A0
A0
A1
A1
A1
A2
A2
A2
A3
A3
A3
V
DD
V
DD
V
DD
54Pin TSOP
(400mil x 875mil)
(0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin
CLK
CS
Name
System clock
Chip select
Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins.
Row address : RA
0
~ RA
12
,
Column address : (x4 : CA
0
~ CA
9
,CA
11
), (x8 : CA
0
~ CA
9
), (x16 : CA
0
~ CA
8
)
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active.
Data inputs/outputs are multiplexed on the same pins.
(x4 : DQ
0
~
3
), (x8 : DQ
0
~
7
), (x16 : DQ
0
~
15
)
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
This pin is recommended to be left No Connection on the device.
CKE
Clock enable
A
0
~ A
12
Address
BA
0
~ BA
1
RAS
CAS
WE
DQM
DQ
0
~
N
V
DD
/V
SS
V
DDQ
/V
SSQ
N.C/RFU
Bank select address
Row address strobe
Column address strobe
Write enable
Data input/output mask
Data input/output
Power supply/ground
Data output power/ground
No connection
/reserved for future use
Rev. 1.5 May 2004
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
