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K6T0808C1D-DL70 参数 Datasheet PDF下载

K6T0808C1D-DL70图片预览
型号: K6T0808C1D-DL70
PDF下载: 下载PDF文件 查看货源
内容描述: 32Kx8位低功耗CMOS静态RAM [32Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 172 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6T0808C1D Family
32Kx8 bit Low Power CMOS Static RAM
FEATURES
Process Technology : TFT
Organization : 32Kx8
Power Supply Voltage : 4.5~5.5V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 28-DIP-600B, 28-SOP-450
28-TSOP1-0813.4 F/R
CMOS SRAM
GENERAL DESCRIPTION
The K6T0808C1D families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fami-
lies also support low data retention voltage for battery back-
up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
K6T0808C1D-L
K6T0808C1D-B
K6T0808C1D-P
K6T0808C1D-F
1. The parameter is tested with 50pF test load.
Operating Temperature
V
CC
Range
Speed
Standby
(I
SB1
, Max)
30µA
5µA
30µA
5µA
Operating
(Icc
2,
Max)
PKG Type
Commercial (0~70°C)
4.5 to 5.5V
Industrial (-40~85°C)
55
1)
/70ns
28-DIP,28-SOP
28-TSOP1-F/R
60mA
28-SOP
28-TSOP1-F/R
70ns
PIN DESCRIPTION
OE
A11
A9
A8
VCC A13
WE
WE
VCC
A13 A14
A12
A8
A7
A6
A9
A5
A4
A11
A3
OE
A10
CS
A3
14
13
12
11
10
9
8
7
6
5
4
3
2
1
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
FUNCTIONAL BLOCK DIAGRAM
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A13
A8
A12
A14
A4
A5
A6
A7
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
Clk gen.
Precharge circuit.
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
28-TSOP
Type1 - Forward
23
22
21
20
19
18
17
16
15
Row
select
Memory array
256 rows
128×8 columns
28-DIP
28-SOP
22
21
20
19
18
17
16
15
A4
A5
A6
I/O8
A7
I/O7 A12
A14
I/O6 VCC
I/O5
I/O4
WE
A13
A8
A9
A11
OE
I/O
1
I/O
8
Data
cont
I/O Circuit
Column select
28-TSOP
Type1 - Reverse
21
22
23
24
25
26
27
28
Data
cont
A10 A3
A0
A1 A2 A9
A11
Pin Name
CS
OE
WE
A
0
~A
14
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Pin Name
I/O
1
~I/O
8
Vcc
Vss
NC
Function
Data Inputs/Outputs
Power
Ground
No connect
CS
WE
OE
Control
Logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Revision 1.0
November 1997