K6T0808C1D Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Min
4.5
0
2.2
-0.5
3)
Typ
5.0
0
-
-
CMOS SRAM
Max
5.5
0
Vcc+0.5V
2)
0.8
Unit
V
V
V
V
Note:
1. Commercial Product : T
A
=0 to 70°C, otherwise specified
Industrial Product : T
A
=-40 to 85°C, otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width≤30ns
3. Undershoot : -3.0V in case of pulse width≤30ns
4. Overshoot and undershoot are sampled, not 100% tested
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled not, 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
V
OL
V
OH
I
SB
I
SB1
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=V
SS
to Vcc
I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA
CS≤0.2V, V
IN
≤0.2V,
V
IN
≥Vcc
-0.2V
Read
Write
-
-
2.4
-
Low Power
Low Low Power
-
-
Test Conditions
Min
-1
-1
-
-
Typ
-
-
5
2
-
45
-
-
-
1
0.2
Max
1
1
10
5
20
60
0.4
-
1
30
5
mA
V
V
mA
µA
µA
Unit
µA
µA
mA
mA
Cycle time=Min,100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH
, Other inputs=V
IH
or V
IL
CS≥Vcc-0.2V, Other inputs=0~Vcc
Revision 1.0
November 1997
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
