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K6T2008V2A-YF70 参数 Datasheet PDF下载

K6T2008V2A-YF70图片预览
型号: K6T2008V2A-YF70
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx8位低功耗和低电压CMOS静态RAM [256Kx8 bit Low Power and Low Voltage CMOS Static RAM]
分类和应用:
文件页数/大小: 10 页 / 194 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6T2008V2A, K6T2008U2A Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS
1
=OE=V
IL
, CS
2
=WE=V
IH
)
t
RC
Address
t
OH
Data Out
Previous Data Valid
t
AA
CMOS SRAM
Data Valid
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
t
RC
Address
t
AA
t
CO1
CS
1
t
HZ(1,2)
CS
2
t
CO2
t
OE
t
OH
OE
t
OLZ
t
LZ
Data Valid
t
OHZ
Data out
NOTES
(READ CYCLE)
High-Z
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
Revision 2.01
October 2001