K6X1008C2D Family
128Kx8 bit Low Power full CMOS Static RAM
FEATURES
•
Process Technology: Full CMOS
•
Organization: 128K x 8
•
Power Supply Voltage: 4.5~5.5V
•
Low Data Retention Voltage: 2V(Min)
•
Three state output and TTL Compatible
•
Package Type: 32-DIP-600, 32-SOP-525,
32-SOP-525, 32-TSOP1-0820F
CMOS SRAM
GENERAL DESCRIPTION
The K6X1008C2D families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
PRODUCT FAMILY
Product Family
K6X1008C2D-B
K6X1008C2D-F
K6X1008C2D-Q
Operating
Temperature
Commercial(0~70°C)
Industrial(-40~85°C)
Automotive(-40~125°C)
4.5~5.5V
55
1)
/70ns
Power Dissipation
Vcc Range
Speed
Standby
(I
SB1
, Max)
10µA
15µA
25µA
25mA
Operating
(I
CC2,
Max)
PKG Type
32-DIP-600, 32-SOP-525,
32-SOP-525
32-TSOP1-0820F
32-SOP-525, 32-TSOP1-0820F
1. The parameters are tested with 50pF test load
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
A11
A9
A8
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-SOP
32-DIP
27
26
25
24
23
22
21
20
19
18
17
Row
addresses
Row
select
Memory array
32-TSOP
Type1-Forward
I/O
1
I/O
8
Data
cont
I/O Circuit
Column select
Data
cont
Column Addresses
Name
CS
1
, CS
2
OE
WE
I/O
1
~I/O
8
A
0
~A
16
Vcc
Vss
NC
Function
Chip Select Input
Output Enable Input
Write Enable Input
Data Inputs/Outputs
Address Inputs
Power
Ground
No Connection
CS
1
CS
2
WE
OE
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 1.0
September 2003
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
