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K6X1008C2D-DF55 参数 Datasheet PDF下载

K6X1008C2D-DF55图片预览
型号: K6X1008C2D-DF55
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx8位低功耗CMOS静态RAM [128Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 179 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6X1008C2D Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS1=OE=V
IL
, CS2=WE=V
IH
)
t
RC
Address
t
OH
Data Out
Previous Data Valid
t
AA
CMOS SRAM
Data Valid
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
t
RC
Address
t
AA
t
CO1
CS
1
t
HZ(1,2)
CS
2
t
CO2
t
OE
t
OH
OE
t
OLZ
t
LZ
Data Valid
t
OHZ
Data out
NOTES (READ
CYCLE)
High-Z
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
6
Revision 1.0
September 2003