K7A803609B
K7A801809B
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on V
DD
Supply Relative to V
SS
Voltage on V
DDQ
Supply Relative to V
SS
Voltage on Input Pin Relative to V
SS
Voltage on I/O Pin Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
256Kx36 & 512Kx18 Synchronous SRAM
SYMBOL
V
DD
V
DDQ
V
IN
V
IO
P
D
T
STG
Commercial
Industrial
T
OPR
T
OPR
T
BIAS
RATING
-0.3 to 4.6
V
DD
-0.3 to V
DD
+0.3
-0.3 to V
DDQ
+0.3
1.6
-65 to 150
0 to 70
-40 to 85
-10 to 85
UNIT
V
V
V
V
W
°C
°C
°C
°C
*Note :
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O
(0°C
≤
T
A
≤
70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
V
DD
V
DDQ
V
SS
MIN
3.135
3.135
0
Typ.
3.3
3.3
0
MAX
3.465
3.465
0
UNIT
V
V
V
* The above parameters are also guaranteed at industrial temperature range.
OPERATING CONDITIONS at 2.5V I/O
(0°C
≤
T
A
≤
70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
V
DD
V
DDQ
V
SS
MIN
3.135
2.375
0
Typ.
3.3
2.5
0
MAX
3.465
2.9
0
UNIT
V
V
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
(T
A
=25°C, f=1MHz)
PARAMETER
Input Capacitance
Output Capacitance
*Note :
Sampled not 100% tested.
SYMBOL
C
IN
C
OUT
TEST CONDITION
V
IN
=0V
V
OUT
=0V
MIN
-
-
MAX
5
7
UNIT
pF
pF
-8-
Nov. 2003
Rev 3.0
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
