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KM29W040AT 参数 Datasheet PDF下载

KM29W040AT图片预览
型号: KM29W040AT
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8位NAND闪存 [512K x 8 bit NAND Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 22 页 / 359 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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KM29W040AT, KM29W040AIT
System Interface Using CE don’ -care.
t
FLASH MEMORY
For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
32byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Figure 3. Program Operation with CE don’ -care.
t
CLE
CE don’-care
t
CE
WE
ALE
I/O
0
~
7
80H
Start Add.(3Cycle)
Data Input
Data Input
10H
t
CS
CE
(Max. 60ns)
t
CH
CE
t
CEA
t
REA
t
WP
WE
I/O
0
~
7
out
RE
Timing requirements : If CE is is exerted high during sequential
data-reading, the falling edge of CE to valid data(tCEA) must
be kept greater than 60ns.
Figure 4. Read Operation with CE don’ -care.
t
CLE
CE don’-care
t
CE
RE
ALE
R/B
t
R
WE
I/O
0
~
7
00H
Start Add.(3Cycle)
Data Output(sequential)
11