KM6164000B Family
256Kx16 bit Low Power CMOS Static RAM
FEATURES
•
Process Technology : TFT
•
Organization : 256Kx16
•
Power Supply Voltage : 4.5~5.5V
•
Low Data Retention Voltage : 2V(Min)
•
Three state output and TTL Compatible
•
Package Type : 44-TSOP2-400F/R
CMOS SRAM
GENERAL DESCRIPTION
The KM616V4000B families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and small package
types for user flexibility of system design. The families also
support low data retention voltage for battery back-up opera-
tion with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
KM6164000BL-L
KM6164000BLI-L
Operating Temperature
Commercial(0~70°C)
Industrial(-40~85°C)
Vcc Range
4.5~5.5V
4.5~5.5V
Speed(ns)
55
1)
/70
70/100
Standby
(I
SB1
, Max)
20µA
50µA
Operating
(I
CC2
, Max)
130mA
PKG Type
44-TSOP2-F/R
1. The parameter is measured with 50pF test load.
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
A12
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
A12
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A13
A14
A0
A1
A15
A16
A17
A2
A3
A4
I/O
1
~I/O
8
Precharge circuit.
Vcc
Vss
44-TSOP2
Forward
44-TSOP2
Reverse
Row
select
Memory array
1024 rows
256×16 columns
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
I/O
9
~I/O
16
Name
CS
OE
WE
A
0
~A
17
I/O
1
~I/O
16
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
Name
Vcc
Vss
UB
LB
N.C
Function
Power
Ground
Upper Byte(I/O
9~16
)
Lower Byte (I/O
1~8
)
No Connection
WE
OE
UB
LB
CS
A8 A9 A10 A5 A6 A7 A4 A12
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 4.01
June 1998
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
