欢迎访问ic37.com |
会员登录 免费注册
发布采购

KM681000CLG-5L 参数 Datasheet PDF下载

KM681000CLG-5L图片预览
型号: KM681000CLG-5L
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8位低功耗CMOS静态RAM [128K x8 bit Low Power CMOS Static RAM]
分类和应用:
文件页数/大小: 10 页 / 191 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
 浏览型号KM681000CLG-5L的Datasheet PDF文件第1页浏览型号KM681000CLG-5L的Datasheet PDF文件第3页浏览型号KM681000CLG-5L的Datasheet PDF文件第4页浏览型号KM681000CLG-5L的Datasheet PDF文件第5页浏览型号KM681000CLG-5L的Datasheet PDF文件第6页浏览型号KM681000CLG-5L的Datasheet PDF文件第7页浏览型号KM681000CLG-5L的Datasheet PDF文件第8页浏览型号KM681000CLG-5L的Datasheet PDF文件第9页  
PRELIMINARY
KM681000C Family
128K x8 bit Low Power CMOS Static RAM
FEATURES
Process Technology: TFT
Organization: 128K x8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP1-0820F/R
CMOS SRAM
GENERAL DESCRIPTION
The KM681000C families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fami-
lies also support low data retention voltage for battery back-
up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature
Vcc Range
Speed
Standby
(I
SB1
, Max)
50µA
10µA
60mA
70ns
50µA
15µA
32-SOP
32-TSOP1-F/R
Operating
(I
CC2
, Max)
PKG Type
KM681000CL
KM681000CL-L
KM681000CLI
KM681000CLI-L
Commercial(0~70°C)
4.5~5.5V
Industrial(-40~85°C)
55/70ns
32-DIP, 32-SOP
32-TSOP1-F/R
PIN DESCRIPTION
A11
A9
A8
VCC A13
WE
A15
CS2
CS2 A15
VCC
WE
N.C
A13 A16
A14
A8
A12
A9
A7
A6
A11
A5
OE
A4
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
A4
A5
A6
A7
A12
A14
A16
N.C
VCC
A15
CS2
WE
A13
A8
A9
A11
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
17
18
19
20
21
22
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
FUNCTIONAL BLOCK DIAGRAM
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Clk gen.
Precharge circuit.
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
A4
A5
A6
A7
A8
A12
A13
A14
A15
A16
V
CC
V
SS
Memory array
1024 rows
128×8 columns
32-TSOP
Type1 - Forward
25
24
23
22
21
20
19
18
17
Row
select
32-DIP
32-SOP
25
24
23
22
21
20
19
18
17
32-TSOP
Type1 - Reverse
24
25
26
27
28
29
30
31
32
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS1
A10
OE
CS1
CS2
I/O
1
I/O
8
Data
cont
I/O Circuit
Column select
Data
cont
A0
A1
A2
A3 A9 A10 A11
Name
CS
1
,CS
2
OE
WE
A
0
~A
16
Function
Chip Select Inputs
Output Enable
Write Enable
Address Inputs
Name
I/O
1
~I/O
8
Vcc
Vss
N.C
Function
Data Inputs/Out-
Power
Ground
No Connection
WE
OE
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 2.0
November 1997