Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage V
CEO
100/120V, High
current 1A.
· Low saturation voltage, excellent h
FE
linearity.
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
1 : Emitter
2 : Collector
( ) : 2SB631, 631K
3 : Base
JEDEC : TO-126
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
2SB631, D600
(–)100
(–)100
2SB631K, D600K
(–)120
(–)120
(–)5
(–)1
(–)2
1
Unit
V
V
V
A
A
W
W
Tc=25˚C
Tj
Tstg
8
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Brakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ICBO
IEBO
IE=(–)10µA, IC=0
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
Conditions
B631, D600
B631K, D600K
B631, D600
B631K, D600K
Ratings
min
(–)100
(–)120
(–)100
(–)120
(–)5
(–)1
(–)1
typ
max
Unit
V
V
V
V
V
µA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4
SANYO [ SANYO SEMICON DEVICE ]
