2SB631, 631K/2SD600, 600K
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Fall Time
Turn-OFF Time
Storage Time
Symbol
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
tf
toff
tstg
Conditions
VCE=(–)5V, IC=(–)50mA
VCE=(–)5V, IC=(–)500mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
IC=(–)500mA, IB=(–)50mA
IC=(–)500mA, IB=(–)50mA
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
min
60*
20
(110)
130
(30)20
(–)0.15
(–)0.85
(80)
100
(100)
500
(600)
700
(–)0.4
(–)1.2
MHz
MHz
pF
V
V
ns
ns
ns
ns
ns
ns
typ
max
320*
Unit
* : The 2SB631/2SD600 are classified by 50mA h
FE
as follows :
60
D
120
100
E
200
160
F
320
Switching Time Test Circuit
No.346–2/4
SANYO [ SANYO SEMICON DEVICE ]
