2SJ560
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–1.5A
VDS=–10V, VGS=–10V, ID=–1.5A
VDS=–10V, VGS=–10V, ID=–1.5A
IS=–1.5A, VGS=0
Conditions
Ratings
min
typ
100
60
25
10
35
25
33
5
1
1
–1.0
–1.5
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
0V
–4V
VIN
VDD
=–10V
ID
=–750mA
RL
=13.3Ω
D
VOUT
VIN
PW=10µs
D.C.≤1%
G
P.G
2SJ560
50Ω
S
-
1.6
-
1.4
ID - VDS
-4
.0
-10
0V
-3.
-2.5
Drain Current, I
D
– A
-
3.2
-
2.8
ID - VGS
VDS=-10V
.0V
V
5
°
C
Tc
=-2
-
0.4
-
0.8
-
1.2
-
1.6
-
2.0
-
2.4
-
2.8
Gate-to-Source Voltage, V
GS
– V
Drain Current, I
D
– A
-
0.8
-
0.6
-
0.4
-
0.2
0
0
-
1.6
-
1.2
-
0.8
-
0.4
0
0
-2.0V
VGS=-1.5V
-
0.1
-
0.2
-
0.3
-
0.4
-
0.5
-
0.6
-
0.7
-
0.8
-
0.9
-
1.0
Drain-to-Source Voltage, V
DS
– V
75
-
3.2
-
1.0
-8.0V
-6.0V
V
-
2.0
°
C
-
3.6
10
| y
f s
| - I
D
VDS=-10V
1000
900
R DS(on) - VGS
Tc=25°C
ID=-0.75A
-0.1A
Forward Transfer Admittance, | yfs | – S
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
DS(on)
– mΩ
800
700
600
500
400
300
200
100
0
0
=-2
Tc
C
75
°
5
°
C
C
25
°
1.0
7
5
3
2
0.1
-
0.01
2
3
5
2 3
5 7
-
1.0
-
0.1
Drain Current, I
D
– A
7
2
3
5
-
1
-
2
-
3
-
4
-
5
-
6
-
7
-
8
Gate-to-Source Voltage, V
GS
– V
25
-
9
-
10
-
1.2
-
2.4
No.6120–2/4
°
C
SANYO [ SANYO SEMICON DEVICE ]
