2SJ560
1000
900
R DS(on) - Tc
7
5
3
I F - VSD
VGS=0
Static Drain-to-Source
On-State Resistance, R
DS (on)
– mΩ
700
600
500
400
300
200
100
.1A
=-0
ID
=
,V G S
Forward Current, I
F
– A
800
V
-2.5
2
-1.0
7
5
3
2
-0.1
7
5
3
2
0
I D=-
=-4V
,VGS
.75A
25
°
C
-
0.2
-
0.4
-
0.6
-
0.8
-
1.0
-
1.2
Diode Forward Voltage, VSD – V
-
60
-
40
-
20
0
0
20
40
60
80
100
120
140
160
-0.01
0
Tc=-25
°
C
75
°
C
-
1.4
Case Temperature, Tc – ˚C
1000
7
5
Ciss,Coss,Crss - VDS
f=1MHz
Gate-to-Source Voltage, V
GS
– V
-
10
VGS - Q g
VDS=-10V
-
9
ID =-1.5A
-
8
-
7
-
6
-
5
-
4
-
3
-
2
-
1
Ciss, Coss, Crss – pF
3
2
100
7
5
3
2
Ciss
Coss
Crss
10
0
-
2
-
4
-
6
-
8
-
10
-
12
-
14
-
16
Drain-to-Source Voltage, V
DS
– V
-
18
-
20
0
0
1.0
2.0
3.0
4.0
5.0
Total Gate Charge, Qg – nC
-
10
7
5
3
SW Time - I D
1000
7
5
A S O
I DP =- 6A
100µs
1
10
ms
ms
10
I D =- 1.5A
0m
s
DC
op
er
at
Switching Time, SW Time – ns
VDD =-10V
VGS=-4V
Drain Current, I
D
– A
3
2
100
7
5
3
2
10
7
5
3
2
1.0
3
5
7
2
-
1.0
7
5
3
2
td(off)
tr
tf
td(on)
-
0.1
7
5
3
2
Operation in this area
is limited by RDS(on).
io
n
-
0.1
-
1.0
Drain Current, I
D
– A
2
3
5
7
2
3
5
-
0.01
-
0.1
Tc=25°C
Single pulse
2
3
5 7
-
1.0
2
3
5 7
-
10
Drain-to-Source Voltage, V
DS
– V
2
3
1.4
P D - Ta
M
Allowable Power Dissipation, P
D
– W
4
3.5
3
P D - Tc
Allowable Power Dissipation, P
D
– W
1.3
1.2
ou
nt
ed
1.0
on
ac
er
0.8
am
ic
bo
ar
d
2
0.6
(2
50
m
0.4
m
2
×
0
.
8m
m
1
)
0.2
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
Case Temperature, Tc – ˚C
No.6120–3/4
SANYO [ SANYO SEMICON DEVICE ]
