SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6029 2N6030
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6029
I
C
=-0.2A ;I
B
=0
2N6030
I
C
=-10A; I
B
=-1A
I
C
=-16A ;I
B
=-4A
I
C
=-10A; I
B
=-1A
I
C
=-8A ; V
CE
=-2V
V
CB
=ratedV
CBO
; I
E
=0
2N6029
I
CEO
Collector cut-off current
2N6030
V
CE
=-60V; I
B
=0
V
CE
=ratedV
CB
V
CE
=ratedV
CB
; T
C
=150
V
EB
=-7V; I
C
=0
2N6029
h
FE-1
DC current gain
2N6030
h
FE-2
C
OB
f
T
DC current gain
Output capacitance
Transition frequency
I
C
=-16A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V ;f=0.1MHz
I
C
=-1A ; V
CE
=-20V;f=0.5MHz
1.0
I
C
=-8A ; V
CE
=-2V
20
4
1000
pF
MHz
80
25
-1.0
mA
-5.0
-1.0
100
mA
V
CE
=-50V; I
B
=0
-1.0
mA
-120
-1.0
-2.0
-1.8
-1.5
-1.0
V
V
V
V
mA
CONDITIONS
MIN
-100
V
TYP.
MAX
UNIT
SYMBOL
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CBO
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
I
CEV
Collector cut-off current
(V
BE(off)
=1.5V)
I
EBO
Emitter cut-off current
2
SAVANTIC [ Savantic, Inc. ]
