SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
MJE180
V
(BR)CEO
Collector-emitter
breakdown voltage
MJE181
MJE182
V
CE
(sat)
-1
V
CE
(sat)
-2
V
CE
(sat)
-3
V
BE
(sat)
-1
V
BE
(sat)
-2
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
MJE180
I
CBO
Collector cut-off current
MJE181
MJE182
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Output capacitance
I
C
=500mA ;I
B
=50mA
I
C
=1.5A ;I
B
=150mA
I
C
=3A ;I
B
=600mA
I
C
=1.5A ;I
B
=150mA
I
C
=3A ;I
B
=600mA
I
C
=500mA ; V
CE
=1V
V
CB
=60V; I
E
=0
T
C
=150
V
CB
=80V; I
E
=0
T
C
=150
V
CB
=100V; I
E
=0
T
C
=150
V
EB
=7V; I
C
=0
I
C
=100mA ; V
CE
=1V
I
C
=500mA ; V
CE
=1V
I
C
=1.5A ; V
CE
=1V
I
C
=100mA ; V
CE
=10V
I
E
=0 ; V
CB
=10V,f=0.1MHz
I
C
=10mA;I
B
=0
CONDITIONS
SYMBOL
MJE180/181/182
MIN
40
60
80
TYP.
MAX
UNIT
V
0.3
0.9
1.7
1.5
2.0
1.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
50
30
12
50
30
250
V
V
V
V
V
V
µA
mA
µA
mA
µA
mA
µA
MHz
pF
2
SAVANTIC [ Savantic, Inc. ]
