MMBT2907A
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain
(I = –0.1 mAdc, V
C
h
FE
—
= –10 Vdc)
= –10 Vdc)
= –10 Vdc)
MMBT2907
MMBT2907A
35
75
—
—
CE
CE
CE
(I = –1.0 mAdc, V
C
MMBT2907
MMBT2907A
50
100
—
—
(I = –10 mAdc, V
C
MMBT2907
MMBT2907A
75
100
—
—
(I = –150 mAdc, V
= –10 Vdc) (3)
= –10 Vdc) (3)
MMBT2907
MMBT2907A
—
100
—
300
C
CE
CE
(I = –500 mAdc, V
C
MMBT2907
MMBT2907A
30
50
—
—
Collector–Emitter Saturation Voltage (3)
(I = –150 mAdc, I = –15 mAdc)
V
V
Vdc
Vdc
CE(sat)
—
—
–0.4
–1.6
C
B
(I = –500 mAdc, I = –50 mAdc)
C
B
Base–Emitter Saturation Voltage (3)
(I = –150 mAdc, I = –15 mAdc)
BE(sat)
—
—
–1.3
–2.6
C
C
B
B
(I = –500 mAdc, I = –50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (3),(4)
f
MHz
pF
T
(I = –50 mAdc, V
C
= –20 Vdc, f = 100 MHz)
200
—
—
8.0
30
CE
Output Capacitance
C
obo
(V
CB
= –10 Vdc, I = 0, f = 1.0 MHz)
E
Input Capacitance
(V = –2.0 Vdc, I = 0, f = 1.0 MHz)
C
pF
ibo
—
EB
C
SWITCHING CHARACTERISTICS
Turn–On Time
t
—
—
—
—
—
—
45
10
on
(V
(V
= –30 Vdc, I = –150 mAdc,
C
CC
B1
Delay Time
t
ns
ns
d
I
= –15 mAdc)
Rise Time
t
r
40
Turn–Off Time
t
100
80
off
= –6.0 Vdc, I = –150 mAdc,
CC
C
Storage Time
t
s
I
= I = –15 mAdc)
B1 B2
Fall Time
t
f
30
3. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
4. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
INPUT
= 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
INPUT
= 50 Ω
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
Z
Ω
Z
o
o
+15 V
–6.0 V
37
–30 V
200
≤
≤
1.0 k
1.0 k
1.0 k
TO OSCILLOSCOPE
RISE TIME 5.0 ns
TO OSCILLOSCOPE
RISE TIME 5.0 ns
0
0
≤
≤
50
–16 V
–30 V
50
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
