MMBT2907A
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
TYPICAL CHARACTERISTICS
3.0
2.0
V
V
= –1.0 V
= –10 V
CE
CE
T
= 125°C
J
25°C
1.0
0.7
0.5
–55°C
0.3
0.2
–0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0 –3.0
–5.0 –7.0 –10
, Collector Current (mA)
–20
–30
–50 –70 –100
–200 –300 –500
I
C
Figure 3. DC Current Gain
–1.0
–0.8
I
= –1.0 mA
–10 mA
–100 mA
–500 mA
C
–0.6
–0.4
–0.2
0
–0.005 –0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–3.0
–30
–2.0
–5.0 –7.0 –10
–20
–50
I
, Base Current (mA)
B
Figure 4. Collector Saturation Region
300
200
500
300
V
= –30 V
/I = 10
= I
V
= –30 V
/I = 10
CC
CC
I
I
I
200
C B
B1 B2
C B
= 25°C
t
r
100
T
t
J
f
70
50
T = 25°C
J
100
70
50
30
20
t
′ = t – 1/8 t
s s f
30
20
t
@ V
= 0 V
BE(off)
d
10
7.0
5.0
10
2.0 V
7.0
5.0
3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
I
, Collector Current
I , Collector Current (mA)
C
C
Figure 5. Turn–On Time
Figure 6. Turn–Off Time
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
