HFH18N50S
Typical Characteristics
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage[V]
V
GS
, Gate-Source Voltage[V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
0.7
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
0.6
0.5
V
GS
= 10V
0.4
0.3
V
GS
= 20V
0.2
∗
Note : T
J
= 25 C
o
0.1
0
10
20
30
40
50
60
70
I
D
, Drain Current [A]
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
5000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
4000
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
C
iss
Capacitances [pF]
8
3000
C
oss
2000
* Note ;
1. V
GS
= 0 V
6
4
1000
2. f = 1 MHz
C
rss
2
∗
Note : I
D
= 19A
0
-1
10
10
0
10
1
0
0
10
20
30
40
50
60
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
