HFS10N65S
Typical Characteristics
(continued)
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.0
1.5
1.0
0.5
∗
Note :
1. V
GS
= 10 V
2. I
D
= 4.6 A
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
10
Figure 8. On-Resistance Variation
vs Temperature
10
2
Operation in This Area
is Limited by R
DS(on)
10
µs
8
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
10
3
10
0
100
µs
1 ms
10 ms
100 ms
DC
6
4
10
-1
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150 C
3. Single Pulse
o
2
10
-2
10
0
10
1
10
2
0
25
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Z
θJC
(t), Thermal Response
10
0
D=0.5
0.2
0.1
10
-1
0.05
0.02
0.01
single pulse
* Notes :
1. Z
θJC
(t) = 2.5
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
P
DM
t
1
10
-3
10
-2
10
-5
t
2
10
0
10
1
10
-4
10
-2
10
-1
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎
SEMIHOW REV.A0,Sep 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
