HFS4N65
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
8
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
7
6
5
4
3
2
1
V
GS
= 20V
V
GS
= 10V
※
Note : T
J
= 25
℃
0
2
4
6
8
10
12
14
I
D
, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
900
800
700
V
GS
, Gate-Source Voltage [V]
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 130V
10
V
DS
= 325V
V
DS
= 520V
Capacitances [pF]
600
500
400
C
iss
8
6
C
oss
300
200
100
0
-1
10
C
rss
※
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
4
2
※
Note : I
D
= 3.6A
0
10
0
10
1
0
2
4
6
8
10
12
14
16
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎
SEMIHOW REV.A0,April 2006
SEMIHOW [ SEMIHOW CO.,LTD. ]
