SAMWIN
SW3710
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
100
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
0.066
V/oC
/ ΔTJ
coefficient
VDS=100V, VGS=0V
VDS=80V, TC=125oC
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
100
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 30A
2.0
-
4.0
V
0.023
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
3400
1320
215
60
4250
1650
340
120
160
310
260
140
-
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
70
VDS=50V, ID=57A, RG=25Ω
td(off)
tf
Turn off delay time
Fall time
195
120
96
Qg
Total gate charge
Gate-source charge
Gate-drain charge
Qgs
Qgd
VDS=80V, VGS=10V, ID=57A
23
nC
36
-
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
57
235
1.5
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=57A, VGS=0V
-
V
Trr
92
160
ns
nC
IS=57A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 270uH, IAS = 57A, VDD = 25V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 57A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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