SAMWIN
Fig. 1. On-state characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
SW3710
Fig. 2. Transfer characteristics
10
2
10
2
I
D
, Drain Current [A]
I
D
, Drain Current [A]
175 C
10
1
o
10
1
25 C
-55 C
o
o
،ط Notes :
1. 250¥ىs Pulse Test
2. T
C
= 25،ة
،ط Notes :
1. V
DS
= 25V
2. 250¥ىs Pulse Test
10
0
10
-1
10
0
10
1
10
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
30
Fig. 4. On state current vs.
diode forward voltage
Drain-Source On-Resistance [m¥ط]
20
V
GS
= 10V
15
I
DR
, Reverse Drain Current [A]
25
V
GS
= 20V
10
2
R
DS(ON)
,
10
1
10
175،ة
25،ة
،ط Notes :
1. V
GS
= 0V
2. 250¥ىs Pulse Test
0
5
،ط Note : T
J
= 25،ة
0
0
50
100
150
200
250
300
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
5500
5000
4500
4000
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Fig. 6. Gate charge characteristics
12
V
DS
= 50V
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 80V
8
Capacitance [pF]
3500
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
،ط Notes :
1. V
GS
= 0V
2. f=1MHz
C
iss
6
4
C
oss
2
،ط Note : I
D
= 57 A
C
rss
30
35
0
0
10
20
30
40
50
60
70
80
90
100
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
3/7
SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
