SAMWIN
SW19N10
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
102
101
100
102
Bottom : 4.5 V
175oC
101
25oC
-55oC
1. VDS = 25V
100
10-1
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
30
25
20
15
10
5
102
VGS = 20V
VGS = 10V
101
1. VGS = 0V
100
0.2
0
0
50
100
150
200
250
300
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
12
5500
Ciss=Cgs+Cgd(Cds=shorted)
VDS = 50V
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
Coss=Cds+Cgd
Crss=Cgd
10
VDS = 80V
8
1. VGS = 0V
2. f=1MHz
6
4
2
Ciss
Coss
Crss
0
0
0
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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