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SWD19N10 参数 Datasheet PDF下载

SWD19N10图片预览
型号: SWD19N10
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 733 K
品牌: SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
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SAMWIN  
SW19N10  
Fig 7. Breakdown Voltage Variation  
vs. Junction Temperature  
Fig. 8. On resistance variation  
vs. junction temperature  
1.2  
1.1  
1.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
،
ط
 Notes :  
1. VGS = 0 V  
0.9  
0.8  
،
ط
 Notes :  
1. VGS = 10 V  
2. ID = 250 ¥
ى
A  
2. ID = 30 A  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Fig. 9. Maximum drain current vs.  
case temperature.  
Fig. 10. Maximum safe operating area  
103  
80  
60  
40  
20  
0
Operation in This Area  
is Limited by R DS(on)  
100 s  
102  
1 ms  
10 ms  
DC  
101  
،
ط
 Notes :  
1. TC = 25 o  
2. TJ = 175 o  
C
C
3. Single Pulse  
100  
10-1  
100  
101  
102  
25  
50  
75  
100  
125  
150  
175  
VDS, Drain-Source Voltage [V]  
TC' Case Temperature [oC]  
Fig. 11. Transient thermal response curve  
100  
D=0.5  
،
ط
 Notes :  
1. Z¥èJC(t) = 0.92 ،
ة
/W Max.  
0.2  
2. Duty Factor, D=t1/t2  
10-1  
0.1  
3. TJM - TC = PDM * Z¥èJC(t)  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
t1, Square Wave Pulse Duration [sec]  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
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