SBN13001
Electrical Characteristics
Symbol
I
CEV
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE
( T
C
= 25 °C unless otherwise noted )
Parameter
Collector Cut-off Current
( V
BE
= - 1.5V )
Collector-Emitter Sustaining Voltage
( I
B
= 0 )
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Resistive Load
Turn-On Time
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Condition
V
CE
= 650V
V
CE
= 650V
I
C
= 1 mA
I
C
= 50mA
I
C
= 100mA
I
C
= 50mA
I
C
= 50mA
I
C
= 100mA
I
C
= 100mA
I
B1
= 20mA
T
P
= 25
㎲
V
CC
= 15V
I
B1
= 20mA
L = 0.35mH
V
CC
= 15V
I
B1
= 20mA
L = 0.35mH
I
C
= 100mA
I
B2
= -50mA
V
clamp
= 300V
I
C
= 100mA
I
B2
= -50mA
V
clamp
= 300V
T
C
= 100 °C
I
B
= 10mA
I
B
= 20mA
I
B
= 10mA
V
CE
= 10V
V
CE
= 10V
V
CC
= 125V
I
B2
= -20mA
T
C
= 100 °C
Min
-
Typ
-
Max
1.0
5.0
-
Units
mA
400
-
V
-
-
-
0.3
0.4
1
V
V
-
10
10
-
30
t
on
t
s
t
f
t
s
t
f
-
0.2
1.5
0.15
1.0
3.0
0.4
㎲
-
2.0
0.12
4.0
0.3
㎲
t
s
t
f
-
2.4
0.15
5.0
0.4
㎲
※
Notes :
Pulse Test : Pulse width
≤
300㎲, Duty cycle
≤
2%
2/4
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
