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SC1480ITSTR 参数 Datasheet PDF下载

SC1480ITSTR图片预览
型号: SC1480ITSTR
PDF下载: 下载PDF文件 查看货源
内容描述: DDR内存电源控制器 [DDR Memory Power Supply Controller]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管双倍数据速率
文件页数/大小: 22 页 / 534 K
品牌: SEMTECH [ SEMTECH CORPORATION ]
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SC1480  
POWER MANAGEMENT  
Electrical Characteristics Cont.  
Test Conditions: VIN = 2.5V, REFIN = 1.25, VCCA = VDDP = 5.0V, VOUT = 1.25V, RTON = 1M (300kHz), 0.1% Resistor Dividers  
Parameter  
Conditions  
25°C  
-40°C to 125°C Units  
Min  
Typ  
Max  
Min  
Max  
PGOOD Fault Delay  
FB forced outside PGOOD  
window.  
2.0  
µs  
VCCA Under Voltage Threshold  
VDDP Under Voltage Threshold  
VDDP Under Voltage Hysteresis  
Over Temperature Lockout  
Soft Start  
Rising Edge Hysteresis 100mv  
4.0  
3.3  
3.7  
3.0  
4.3  
V
V
3.75  
250  
165  
mV  
C
10°C Hysteresis  
Soft-Start Ramp Time  
Under-Voltage Blank Time  
Gate Drivers  
REFIN high to full current limit.  
SMPS Turn-On  
1.6  
2
ms  
ms  
Dead Time  
DH or DL rising  
30  
0.8  
2
ns  
A
DL Pull-Down Resistance  
DL Pull-Up Resistance  
DH Pull-Down Resistance  
DH Pull-Up Resistance  
DL Sink Current  
DL low  
1.6  
4
DL high  
DH low, BST - LX = 5V  
DH high, BST - LX = 5V  
DL - PGND = 2.5V  
VDDP - DL = 2.5V  
DH - LX = 2.5V, BST - LX = 5V  
2
4
2
4
2
DL Source Current  
1
A
DH Sink Current  
1
A
DH Source Current  
BST - DH = 2.5V,  
BST - LX = 5V  
1
A
Notes:  
(1) When the inductor is in continuous conduction mode, the output voltage will have a DC regulation level higher  
than the error-comparator threshold by 50% of the ripple voltage.  
(2) Using a current sense resistor, this measurement relates to PGND minus the voltage of the source on the  
low-side MOSFET.  
(3) This device is ESD sensitive. Use of ESD handling precautions is required.  
(4) Measured in accordance with JESD51-1, JESD51-2 and JESD51-7.  
2006 Semtech Corp.  
4
www.semtech.com